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| Hardware Documentation Data Sheet HAL 880 Programmable Linear Hall-Effect Sensor (R) Edition Feb. 23, 2009 DSH000152001EN HAL880 Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks - HAL DATA SHEET Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Contents Page 4 4 4 5 5 5 5 5 6 6 8 11 11 13 13 17 17 17 18 18 19 21 22 22 22 22 23 23 23 24 25 25 26 26 26 29 30 30 33 34 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 2.1. 2.2. 2.3. 2.3.1. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.5.1. 3.6. 3.6.1. 3.7. 3.8. 3.9. 3.10. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections and Short Descriptions Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Storage and Shelf Life Characteristics Definition of Sensitivity Error ES Open-Circuit Detection Power-On Operation Overvoltage and Undervoltage Detection Magnetic Characteristics Application Notes Application Circuit Use of two HAL880 in Parallel Temperature Compensation Ambient Temperature EMC and ESD Programming of the Sensor Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information Data Sheet History Micronas Feb. 23, 2009; DSH000152_001EN 3 HAL880 Programmable Linear Hall-Effect Sensor 1. Introduction The HAL880 is a new member of the Micronas family of programmable linear Hall sensors. The HAL880 complements the existing Hall-effect sensor family HAL8xy to the lower end. It is designed to fulfill the requirements of today's state-of-the-art applications for linear and angular measurements that require programmability to compensate system tolerances. The HAL880 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC can be used for angle or distance measurements if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. The HAL880 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL880 is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. This offers a lowcost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. In addition, the temperature compensation of the Hall IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. DATA SHEET The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from -40 C up to 125 C. The HAL 880 is available in the very small leaded packages TO92UT-1 and TO92UT-2. 1.1. Major Applications Due to the sensor's versatile programming characteristics and low temperature drifts, the HAL880 is the optimal system solution for applications such as: - contactless potentiometer, - rotary position measurement, - linear movement, - current measurements. 1.2. Features - programmable linear Hall effect sensor with ratiometric output and digital signal processing - 12-bit analog output - multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function - open-circuit (ground and supply line break detection) with 10 k pull-up and pull-down resistor, overvoltage and undervoltage detection - for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin - temperature characteristics are programmable for matching common magnetic materials - programmable clamping function - programming through a modulation of the supply voltage - operates from -40 C up to 140 C junction temperature - operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V - operates with static magnetic fields and dynamic magnetic fields up to 1 kHz - overvoltage and reverse-voltage protection at all pins - magnetic characteristics extremely robust against mechanical stress - short-circuit protected push-pull output - EMC and ESD optimized design 4 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 1.6. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note, that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.3. Marking Code The HAL880 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range K HAL880 880K 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.4. on page 25. 1.7. Pin Connections and Short Descriptions Pin No. Pin Name VDD Type IN Short Description Supply Voltage and Programming Pin Ground OUT Push-Pull Output and Selection Pin 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K Package: UT for TO92UT-1/-2 Type: 880 Example: HAL880UT-K Type: 880 Package: TO92UT Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1 2 3 GND OUT 1 VDD OUT 3 2 GND Fig. 1-1: Pin configuration Micronas Feb. 23, 2009; DSH000152_001EN 5 HAL880 2. Functional Description 2.1. General Function The HAL880 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal processing Unit (DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 8. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. VDD (V) DATA SHEET analog output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant and nonredundant EEPROM cells. The non-redundant EEPROM cells are only used to store production information inside the sensor. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. HAL 880 8 7 6 5 VDD VOUT (V) As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2-1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The VDD GND OUT digital analog Fig. 2-1: Programming with VDD modulation VDD Internally stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Open-circuit, Overvoltage, Undervoltage Detection Protection Devices Switched Hall Plate A/D Converter Digital Signal Processing D/A Converter Analog Output OUT EEPROM Memory Open-Circuit Detection Lock Control GND Fig. 2-2: HAL880 block diagram 6 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Digital Output Digital Signal Processing 14 bit A/D Converter Digital Filter Multiplier Adder Limiter D/A Converter TC 5 bit TCSQ 3 bit Mode Register Filter Range 2 bit 1 bit Other: 5 bit Sensitivity 14 bit VOQ 11 bit Min-Out 8 bit Max-Out 9 bit Lock 1 bit Micronas Register TC Range Select 2 bit EEPROM Memory Lock Control Fig. 2-3: Details of EEPROM and digital signal processing Micronas Feb. 23, 2009; DSH000152_001EN 7 HAL880 2.2. Digital Signal Processing and EEPROM The DSP is the main part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-3 on page 7. DATA SHEET A/D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from -30 mT ... +30 mT up to -100 mT ... +100 mT. During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The D/A-READOUT at any given magnetic field depends on the programmed magnetic field range, the low-pass filter, TC values, CLAMP-LOW and CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter The EEPROM registers consist of four groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and TC-range for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters. - The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT. - The parameter Sensitivity defines the magnetic sensitivity: V OUT Sensitivity = ---------------B Note: During application design, it should be taken into consideration that the maximum and minimum D/A-READOUT should not saturate in the operational range of the specific application. - The output voltage can be calculated as: VOUT Sensitivity x B + V OQ Range The RANGE bits are bit 2 and 3 of the MODE register; they define the magnetic field range of the A/D converter. Magnetic Field Range -30mT...30 mT -60 mT...60 mT -80 mT...80 mT -100 mT...100 mT RANGE 0 1 2 3 The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VDD or GND and open connections). Group 3 contains the general purpose register GP. The GP register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store information such as lot number, wafer number, x and y position of the die on the wafer, etc. This information can be readout by the customer and stored in its own data base or it can stay in the sensor as it is. Group 4 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production. These registers are used for oscillator frequency trimming, 8 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Filter The FILTER bit is bit number 4 of the MODE register; it defines the -3 dB frequency of the digital low pass filter. -3 dB Frequency 500 Hz 1 kHz FILTER 0 1 TC-Range [ppm/k] -3100 to -1800 -1750 to -550 -500 to +450 (default value) +450 to +1000 GROUP 0 2 1 3 Bit Time The BITTIME bit is bit number 5 of the MODE register; It defines the protocol bit time for the communication between the sensor and the programmer board. Bit Time 1:64 (Typ. 1.75 ms) 1:128 (Typ. 3.5 ms) BITTIME 0 1 TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example: 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Sensitivity The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between -4 and 4. For VDD = 5 V, the register can be changed in steps of 0.00049. For all calculations, the digital value from the magnetic field of the D/A converter is used. This digital information is readable from the D/A-READOUT register. Vout x 16384 SENSITIVITY = --------------------------------------------------------------2 x DA-Readout x VDD Output Format The OUTPUTMODE bits are the bits numbers 6 to 7 of the MODE register. Output Format Analog Output (12 bit) OUTPUTMODE 0 VOQ TC Register The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about -3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about -7 ppm/K to 2 ppm/K. The full TC range is separated in the following four ranges: The VOQ register contains the parameter for the adder in the DSP. VOQ is the output voltage without external magnetic field (B = 0 mT) and programmable from -VDD up to VDD. For VDD = 5 V, the register can be changed in steps of 4.9 mV. Note: If VOQ is programmed to a negative voltage, the maximum output voltage is limited to: V OUTmax = VOQ + VDD Micronas Feb. 23, 2009; DSH000152_001EN 9 HAL880 Clamping Voltage The output voltage range can be clamped in order to detect failures like short circuits to VDD or GND or an open circuit. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 9.77 mV. The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in steps of 9.77 mV. D/A-Readout DATA SHEET The 14-bit D/A-READOUT register delivers the actual digital value of the applied magnetic field after the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. GP Register This register can be used to store some information, such as production date or customer serial number. Micronas will store production lot number, wafer number, and x, y coordinates in three blocks of this registers. The total register contains of four blocks with a length of 13 bit each. The customer can read out this information and store it in his own production data base for reference or he can change them and store own production information. Note: To enable programming of the GP register, bit 0 of the MODE register has to be set to 1. This register is not a guarantee for traceability. LOCKR By setting the first bit of this 2-bit register, all registers will be locked and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. Warning: This register cannot be reset! 10 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Step 3: Define Calibration Points The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. Lowclampingvoltage VOUT1,2 Highclampingvoltage 2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC880) for the input of the register values. For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended. The calibration has be done as follows: For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the output mode and the GP register value are given for this application. Therefore, the values of the following registers should be identical for all sensors of the customer application. - FILTER (according to the maximum signal frequency) - RANGE (according to the maximum magnetic field at the sensor position) - OUTPUTMODE - TC, TCSQ, and TC-RANGE (depends on the material of the magnet and the other temperature dependencies of the application) - GP (if the customer wants to store own production information, it is not necessary to change this register) As the clamping voltages are given, they have an influence on the D/A-readout value and therefore have to be set after the adjustment process. Write the appropriate settings into the HAL880 registers. Step 4: Calculation of VOQ and Sensitivity Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/A-READOUT1. Now, set the system to calibration point 2, read the register D/A-READOUT again, and get the value D/A-READOUT2. With these values, and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: 1 ( Vout2 - Vout1 ) 16384 Sensitivity = -- x ---------------------------------------------------------------------------------- x -------------2 D/A-Readout2 - D/A-Readout1 5 1 Vout2 x 16384 V OQ = ----- x ------------------------------------ - 16 5 5 [ ( D/A-Readout2 - 8192 ) x Sensitivity x 2 ] x ----------1024 This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. At that time, it is also possible to store the application specific values for Clamp-Low and Clamp-High into the sensors EEPROM. Step 2: Initialize DSP As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ, and CLAMP-LOW/HIGH, these registers have first to be initialized with defined values: - VOQINITIAL = 2.5 V - SensitivityINITIAL = 0.5 - Clamp-Low = 0 V - Clamp-High = 4.999 V Micronas Feb. 23, 2009; DSH000152_001EN 11 HAL880 The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. DATA SHEET Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from step 1 are overwritten in step 4. Step 5: Locking the Sensor The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Warning: This register can not be reset! 12 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 3. Specifications 3.1. Outline Dimensions Fig. 3-1: TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g Micronas Feb. 23, 2009; DSH000152_001EN 13 HAL880 DATA SHEET Fig. 3-2: TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread Weight approximately 0.12 g 14 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Fig. 3-3: TO92UT-1: Dimensions ammopack inline, spread Micronas Feb. 23, 2009; DSH000152_001EN 15 HAL880 DATA SHEET Fig. 3-4: TO92UT-2: Dimensions ammopack inline, not spread 16 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 3.2. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 3.3. Positions of Sensitive Areas TO92UT-1/-2 y A4 Bd 1.5 mm nominal 0.3 mm nominal 0.3 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol VDD VDD -IDD VOUT VOUT - VDD IOUT tSh TJ NPROG 1) 2) 3) 4) 5) Parameter Supply Voltage Supply Voltage Reverse Supply Current Output Voltage Excess of Output Voltage over Supply Voltage Continuous Output Current Output Short Circuit Duration Junction Temperature Range Number of Programming Cycles Pin No. 1 1 1 3 3,1 3 3 Min. -8.5 -14.41) 2) - -55) -55) - -10 - -40 -40 - Max. 8.5 14.41) 2) 501) 8.53) 14.43) 2) 2 10 10 1704) 150 100 Unit V V mA V V mA min C C as long as TJmax is not exceeded t < 10 min (VDDmin = -15 V for t < 1 min, VDDmax = 16 V for t < 1 min) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to -14 V) t < 1000h internal protection resistor = 50 Micronas Feb. 23, 2009; DSH000152_001EN 17 HAL880 3.5. Recommended Operating Conditions DATA SHEET Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol VDD IOUT RL CL Parameter Supply Voltage Continuous Output Current Load Resistor Load Capacitance Pin No. 1 3 3 3 Min. 4.5 -1 5.0 0.33 Typ. 5 - 10 10 Max. 5.5 1 - 1000 Unit V mA k nF RL: Can be pull-up or pull-down resistor 3.5.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 18 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 3.6. Characteristics at TJ = -40 C to +140 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operating Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol IDD VDDZ VOZ Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Resolution INL Non-Linearity of Output Voltage over Temperature Pin No. 1 1 3 3 3 Min. - - - - -1.0 Typ. 7 17.5 17 12 0 Max. 10 20 19.5 - 1.0 Unit mA V V bit % IDD = 25 mA, TJ = 25 C, t = 20 ms IO = 10 mA, TJ = 25 C, t = 20 ms ratiometric to VDD 1) % of supply voltage2) For Vout = 0.35 V ... 4.65 V; VDD = 5 V 3 -1.0 0 1.0 % VOUT1 - VOUT2 > 2 V during calibration procedure (see Section 3.6.1. on page 21) RL = 5 k, VDD = 5 V RL = 5 k, VDD = 5 V VDD = 5 V, -1 mA IOUT 1mA VDD = 5 V, -1 mA IOUT 1mA Conditions ER Ratiometric Error of Output over Temperature (Error in VOUT / VDD) Error in Magnetic Sensitivity over Temperature Range Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range Accuracy of Output Voltage at Clamping High Voltage over Temperature Range Upper Limit of Signal Band3) Lower Limit of Signal Band3) Internal ADC Frequency over Temperature Range Step Response Time of Output ES VOUTCL VOUTCH VOUTH VOUTL fADC tr(O) 3 3 3 3 3 - 3 -6 -45 -45 4.65 - - - 0 0 0 4.8 0.2 128 3 2 6 45 45 - 0.35 - 5 4 % mV mV V V kHz ms ms 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax CL = 10 nF CL = 10 nF, 90% of VOUT BAC < 10 mT; 3 dB Filter frequency = 1 kHz magnetic range = 60 mT4) 3 dB Filter frequency = 500 Hz Sensitivity 0.7; C = 4.7 nF (VDD & VOUT to GND) VOUTLmax VOUT VOUTHmin td(O) tPOD BW VOUTn Delay Time of Output Power-Up Time (Time to Reach Stabilized Output Voltage) Small Signal Bandwidth (-3 dB) Noise Output Voltagepp 3 - 3 3 - 1.5 - - 0.1 1.7 1 6 0.5 1.9 - 15 ms ms kHz mV ROUT 1) 2) 3) 4) Output Resistance over Recommended Operating Range 3 - 1 10 Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096 if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH peak-to-peak value exceeded: 5% Micronas Feb. 23, 2009; DSH000152_001EN 19 HAL880 DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions TO92UT Packages Thermal Resistance Rthja Rthjc Rthjs Junction to Air Junction to Case Junction to Solder Point - - - - - - - - - 235 61 128 K/W K/W K/W Measured with a 1s0p board Measured with a 1s0p board Measured with a 1s1p board 20 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 3.6.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: meas ES = max abs ----------- - 1 ideal [ Tmin, Tmax ] -10 In the example below, the maximum error occurs at C: 1.001 ES = ------------ - 1 = 0.9% 0.992 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 C normalized to achieve a value of 1 at 25 C 2) ideal 200 ppm/k 1.03 least-square-fit straight-line of normalized measured data relative sensitivity related to 25 C value 1.02 measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 C 1.01 1.001 1.00 0.992 0.99 0.98 -50 -25 -10 0 25 50 75 100 temperature [C] 125 150 175 Fig. 3-5: ES definition example Micronas Feb. 23, 2009; DSH000152_001EN 21 HAL880 3.7. Open-Circuit Detection at TJ = -40 C to +140 C. Typical Characteristics for TJ = 25 C, after locking the sensor Symbol VOUT VOUT Parameter Output Voltage at Open VDD Line Output Voltage at Open GND Line Pin No. 3 3 Min. 0 4.85 Typ. 0 4.9 Max. 0.15 5.0 Unit V V Comment DATA SHEET VDD = 5 V RL = 10 k to 200 k VDD = 5 V 10 k RL 200 k RL: can be pull-up or pull-down resistor 3.8. Power-On Operation at TJ = -40 C to +140 C, after programming and locking. Typical Characteristics for TJ = 25 C. Symbol PORUP PORDOWN Parameter Power-On Reset Voltage (UP) Power-On Reset Voltage (DOWN) Min. - - Typ. 3.4 3.0 Max. - - Unit V V 3.9. Overvoltage and Undervoltage Detection at TJ = -40 C to +140 C. Typical Characteristics for TJ = 25 C, after programming and locking Symbol VDD,UV VDD,OV 1) Parameter Undervoltage Detection Level Overvoltage Detection Level Pin No. 1 1 Min. - 8.5 Typ. 4.2 8.9 Max. 4.3 10.0 Unit V V Conditions 1) 1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (97% of VDD at RL = 10 k to GND). The CLAMP-LOW register has to be set to a voltage 200 mV. Note: The over- and undervoltage detection is activated only after locking the sensor! 3.10. Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol BOffset BOffset/T Parameter Magnetic Offset Magnetic Offset Change due to TJ Pin No. 3 Min. -0.5 -15 Typ. 0 0 Max. 0.5 15 Unit mT T/K Conditions B = 0 mT, IOUT = 0 mA, TJ = 25 C, unadjusted sensor B = 0 mT, IOUT = 0 mA 22 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 4.2. Use of two HAL880 in Parallel Two different HAL880 sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the "Deactivate" command on the common supply line. Then, the appropriate IC is activated by an "Activate" pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the "Deactivate" command is sent again and the second IC can be selected. 4. Application Notes 4.1. Application Circuit For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. In addition, the input of the controller unit should be pulled-down with a 10 k resistor and a ceramic 4.7 nF capacitor. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VDD line at this time must be able to resist this voltage. VDD Note: The multi-programming of two sensors works only if the outputs of the two sensors are pulled to GND with a 10 k pull-down resistor. OUT HAL880 4.7 nF 4.7 nF 4.7 nF 10 k VDD C OUT A & Select A GND 10 nF HAL880 Sensor A 4.7 nF HAL880 Sensor B OUT B & Select B Fig. 4-1: Recommended application circuit 4.7 nF GND Fig. 4-2: Parallel operation of two HAL880 Micronas Feb. 23, 2009; DSH000152_001EN 23 HAL880 4.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC, TCSQ, and TC-Range codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC, TCSQ, and TC-Range combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. DATA SHEET Temperature Coefficient of Magnet (ppm/K) -1400 -1500 -1600 -1700 -1800 -1900 TC-Range TC TCSQ 2 2 2 2 0 0 0 0 0 0 0 0 0 0 0 0 0 0 8 4 4 0 31 28 28 24 24 20 16 14 12 8 8 4 4 0 3 7 1 6 6 7 2 6 1 0 5 5 1 6 3 7 1 4 Temperature Coefficient of Magnet (ppm/K) 1075 1000 900 750 675 575 450 400 250 150 50 0 -100 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -1100 -1200 -1300 TC-Range TC TCSQ -2000 -2100 3 3 3 3 3 3 3 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 31 28 24 16 12 8 4 31 24 20 16 15 12 8 4 0 0 31 28 24 20 16 16 12 12 7 1 0 2 2 2 2 0 1 1 2 1 0 1 4 7 0 2 1 3 6 7 2 5 0 -2200 -2400 -2500 -2600 -2800 -2900 -3000 -3100 -3300 -3500 Note: The above table shows only some approximate values. Micronas recommends to use the TC-Calc software to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. 24 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 4.4. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + T At static conditions and continuous operation, the following equation applies: T = I DD x V DD x R thJ For typical values use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For VDD = 5.5 V, Rth = 235 K/W, and IDD = 10 mA, the temperature difference T = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Lmax - T 4.5. EMC and ESD The HAL880 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V on-board system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line, or by radiated disturbances, the application circuit shown in Fig. 4-1 on page 23 is recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 3 (electrical transient transmission by capacitive or inductive coupling). Please contact Micronas for the detailed investigation reports with the EMC and ESD results. Micronas Feb. 23, 2009; DSH000152_001EN 25 HAL880 5. Programming of the Sensor 5.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VDD-line and the output. The bit time for the VDD-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical "0" is coded as no voltage change within the bit time. A logical "1" is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. DATA SHEET - Read a register (see Fig. 5-3 on page 28) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. - Programming the EEPROM cells (see Fig. 5-4 on page 28) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. - Activate a sensor (see Fig. 5-5 on page 28) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 k resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 5.2. Definition of the Telegram tr tf tp0 VDDL tp0 Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: - Write a register (see Fig. 5-2 on page 28) After the AP Bit follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. VDDH logical 0 or VDDH logical 1 VDDL tp1 tp0 or tp1 tp0 Fig. 5-1: Definition of logical 0 and 1 bit 26 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Table 5-1: Telegram parameters Symbol VDDL VDDH tr tf tp0 tpOUT tp1 VDDPROG tPROG trp tfp tw Vact tact Vout,deact Parameter Supply Voltage for Low Level during Programming Supply Voltage for High Level during Programming Rise Time Fall Time Bit Time on VDD Bit Time on Output Pin Voltage Change for Logical 1 Supply Voltage for Programming the EEPROM Programming Time for EEPROM Rise Time of Programming Voltage Fall Time of Programming Voltage Delay Time of Programming Voltage after Acknowledge Voltage for an Activate Pulse Duration of an Activate Pulse Output Voltage after Deactivate Command Pin 1 1 1 1 1 3 1, 3 1 1 1 1 1 3 3 3 Min. 5 6.8 - - 1.7 2 50 12.4 95 0.2 0 0.5 3 0.05 0 Typ. 5.6 8.0 - - 1.75 3 65 12.5 100 0.5 - 0.7 4 0.1 0.1 Max. 6 8.5 0.05 0.05 1.8 4 80 12.6 105 1 1 1 5 0.2 0.2 Unit V V ms ms ms ms % V ms ms ms ms V ms V tp0 is defined through the Sync Bit tpOUT is defined through the Acknowledge Bit % of tp0 or tpOUT Remarks Micronas Feb. 23, 2009; DSH000152_001EN 27 HAL880 DATA SHEET WRITE Sync VDD Acknowledge VOUT COM CP ADR AP DAT DP Fig. 5-2: Telegram for coding a Write command READ Sync VDD Acknowledge VOUT DAT DP COM CP ADR AP Fig. 5-3: Telegram for coding a Read command ERASE and PROM VDDPROG trp tPROG tfp Sync VDD COM CP ADR AP Acknowledge VOUT tw Fig. 5-4: Telegram for coding the EEPROM programming tr VOUT tACT tf VACT Fig. 5-5: Activate pulse 28 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Data Bits (DAT) The 14 Data Bits contain the register information. The registers use different number formats for the Data Bits. These formats are explained in Section 5.4. on page 30 In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. 5.3. Telegram Codes Sync Bit Each telegram starts with the Sync Bit. This logical "0" pulse defines the exact timing for tp0. Command Bits (COM) The Command code contains 3 bits and is a binary number. Table 5-2 shows the available commands and the corresponding codes for HAL880. Command Parity Bit (CP) This parity bit is "1", if the number of zeros within the 3 Command Bits is uneven. The parity bit is "0", if the number of zeros is even. Data Parity Bit (DP) This parity bit is "1", if the number of zeros within the binary number is even. The parity bit is "0", if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 5-3 on page 31 shows the available addresses for the HAL880 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical "0" pulse defines the exact timing for tpOUT. Address Parity Bit (AP) This parity bit is "1", if the number of zeros within the 4 Address bits is uneven. The parity bit is "0", if the number of zeros is even. Table 5-2: Available commands Command READ WRITE PROM ERASE Code 2 3 4 5 Explanation read a register write a register program all nonvolatile registers (except the lock bits) erase all nonvolatile registers (except the lock bits) Micronas Feb. 23, 2009; DSH000152_001EN 29 HAL880 5.4. Number Formats Binary number: The most significant bit is given as first, the least significant bit as last digit. Example: 101001 represents 41 decimal. VOQ DATA SHEET - The register range is from -1024 up to 1023. - The register value is calculated by: V OQ VOQ = ---------- x 1024 V DD Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: SENSITIVITY - The register range is from -8192 up to 8191. - The register value is calculated by: SENSITIVITY = Sensitivity x 2048 0101001 represents +41 decimal 1101001 represents -41 decimal Two's complementary number: The first digit of positive numbers is "0", the rest of the number is a binary number. Negative numbers start with "1". In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add "1". Example: TC - The TC register range is from 0 up to 1023. - The register value is calculated by: TC = GROUP x 256 + TCValue x 8 + TCSQValue 0101001 represents +41 decimal 1010111 represents -41 decimal MODE 5.5. Register Information CLAMP-LOW - The register range is from 0 up to 255. - The register value is calculated by: LowClampingVoltage x 2 CLAMP-LOW = ------------------------------------------------------------- x 255 VDD - The register range is from 0 up to 255 and contains the settings for FILTER and RANGE: MODE = OUTPUTMODE x 32 + BITRATE x 16 + FILTER x 8 + RANGE x 2 + EnableProgGPRegisters D/A-READOUT - This register is read only. CLAMP-HIGH - The register range is from 0 up to 511. - The register value is calculated by: HighClampingVoltage CLAMP-HIGH = ----------------------------------------------------- x 511 V DD - The register range is from 0 up to 16383. DEACTIVATE - This register can only be written. - The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. - The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. 30 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 Table 5-3: Available register addresses Register CLAMP-LOW CLAMP-HIGH VOQ SENSITIVITY MODE LOCKR GP REGISTERS 1...3 Code 1 2 3 4 5 6 8 Data Bits 8 9 11 14 8 2 13 Format binary binary two's compl. binary signed binary binary binary binary Customer read/write/program read/write/program read/write/program read/write/program read/write/program read/write/program read/write/program Range, filter, output mode, interface bit time settings Range and filter settings Lock Bit It is only possible to program this register if the mode register bit zero is set to 1. Bit sequence is reversed during read sequence. bit 0 to 2 TCSQ bit 3 to 7 TC bit 7 to 9 TC-RANGE It is only possible to program this register if the mode register bit zero is set to 1. Deactivate the sensor Remark Low-clamping voltage High-clamping voltage D/A-READOUT TC 9 11 14 10 binary binary read read/write/program GP REGISTER 0 12 13 binary read/write/program DEACTIVATE 15 12 binary write Micronas Feb. 23, 2009; DSH000152_001EN 31 HAL880 DATA SHEET Table 5-4: Data formats Char Register CLAMP LOW CLAMP HIGH VOQ SENSITIVITY MODE LOCKR GP 1..3 Registers D/AREADOUT TC GP 0 Register DEACTIVATE Bit Write Read Write Read Write Read Write Read Write Read Write Read Write Read Read Write Read Write Read Write 15 - - - - - - - - - - - - - - - - - - - - DAT3 14 - - - - - - - - - - - - - - - - - - - - 13 - V - V - V V V - V - V - V V - V - V - 12 - V - V - V V V - V - V V V V - V V V - 11 - V - V - V V V - V - - V V V - V V V 1 DAT2 10 - V - V V V V V - V - - V V V - V V V 0 09 - V - V V V V V - V - - V V V V V V V 0 08 - V V V V V V V - V - - V V V V V V V 0 07 V V V V V V V V V V - - V V V V V V V 0 DAT1 06 V V V V V V V V V V - - V V V V V V V 0 05 V - V V V V V V V - - - V V V V V V V 0 04 V - V - V V V V V - - - V V V V V V V 0 03 V - V - V V V V V - - - V V V V - V V 1 DAT0 02 V - V - V - V V V - - - V V V V - V V 1 01 V - V - V - V V V - V - V V V V - V V 1 00 V - V - V - V V V - V - V - V V - V - 1 V: valid, -: ignore, bit order: MSB first 32 Feb. 23, 2009; DSH000152_001EN Micronas DATA SHEET HAL880 5.6. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. Note: To store data in the GP register, it is necessary to set bit number 0 of the MODE register to "1", before sending an ERASE and PROM command. Otherwise the data stored in the GP register will not be changed. If all HAL880 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL880. The LOCK function is active after the next power-up of the sensor. The success of the lock process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas Feb. 23, 2009; DSH000152_001EN 33 HAL880 6. Data Sheet History 1. Data Sheet: "HAL880 Programmable Linear HallEffect Sensor", Oct. 14, 2008, AI000145_001EN. First release of the advance information. 2. Data Sheet: "HAL880 Programmable Linear HallEffect Sensor", Feb. 23, 2009, DSH000152_001EN. Second release of the data sheet. Minor changes: - small numbering changes (order of chapters). DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com 34 Feb. 23, 2009; DSH000152_001EN Micronas |
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